any changing of specification will not be informed individua l BAS516S surface mount switching diode ele 1.6 0.1 1.2 0.05 0.8 0.05 cathode mark 0.6 0.1 0.12 0.05 sod-523 0.3 0.05 dimensions in millimeters features extremely small surface mounting type. (emd2) . high speed. (trr= 4 ns type.) silicon epitaxial planer mechanical data . . . . high speed switching high reliabilty ma ximum r a ma ma ting s (t j = 2 5 unless otherwise noted) rating symbol v alue unit peak reverse voltage dc reverse voltag e v r v r r m 75 v olts v olts mean rectifying curren t i o ma peak forward current i i fm surge junction t emperature surge current (1s) t j 125 storage t emperature range t stg -55 to +125 250 5 00 electrica l characteristics (t a = 2 5 ) 85 500 j j j j e l e k t r o n i s c h e b a u e l e m e n t e h t t p : / / w w w . s e c o s g m b h . c o m s ymbol p arameter c ondition m ax . u nit v f forward voltag e i f =1 m a 71 5 mv i f = 1 0 m a 85 5 mv i f = 5 0 m a 1 v i f = 15 0 m a 1.2 5 v i r reverse curren t v r = 2 5 v 30 na v r = 7 5 v 1 m a v r = 2 5 v ; t j = 15 0 c 30 m a v r = 7 5 v ; t j = 15 0 c ; 5 0 m a c d diode capacitanc e f =1 mhz; v r = 0; se e fig.6 1 pf t r r reverse recovery tim e when switched from i f = 1 0 ma to i r = 1 0 ma; r l = 10 0 w ; measured at i r = 1 ma; se e fig.7 4n s v f r forward recovery voltag e when switched from i f = 1 0 ma; t r = 2 0 ns; se e fig. 8 1.7 5 v marking: 61 01 -jun-2002 rev. a page 1 of 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
BAS516S surface mount switching diode any changing of specification will not be informed individua l e l e k t r o n i s c h e b a u e l e m e n t e h t t p : / / w w w . s e c o s g m b h . c o m fig.1 maximum permissible continuous forward current as a function of soldering point temperature. handbook, halfpage 0 100 150 50 200 400 500 300 200 0 100 t s ( o c) i f (ma) fig.2 forward current as a function of forward voltage tj=25 o c 02 300 i f (ma) 0 100 200 1 v f (v) fig.3 reverse current as a function of junction temperature. 10 5 10 4 10 200 0 100 t ( c) j o i r (na) 10 3 10 2 75 v 25 v typ max v = 75 v r typ fig.4 diode capacitance as a function of reverse voltage; typical values. f=1mhz; t j =25 c . handbook, halfpage 0 0.6 0.4 0.2 0 48 1 6 v r (v) c d (pf) 12 typical values. maximum values . 01-jun-2002 rev. a page 2 of 2
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